The density of thin-film integrated circuits (ICs) is increasing. As the size and spacing of devices on integrated circuits (C) continue to decrease, an insulating layer (usually SiO2) must be deposited to isolate different active components (transistors, resistors, capacitors) in the circuit.
Insulating structures such as shallow trench isolation regions are formed in the trenches within the substrate between components. The spin-on dielectric layer (SOD) method of silicon dioxide precursor, perhydropolysilazane (PHPS) is an effective means to replace high-density plasma and CVD technology.
Perhydropolysilazane forms a coating on the surface of the silicon dioxide substrate by spin deposition, and after curing and annealing, it forms a perfect silicon dioxide insulating layer. Reduce the void defects of the shallow trench isolation region structure.
